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| R N N-CHANNEL MOSFET JCS5N60B MAIN CHARACTERISTICS Package ID VDSS Rdson @Vgs=10V Qg UPS .A 0 600 V 2.4 13.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 9pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Crss ( 9pF) dv/dt RoHS ORDER MESSAGE Order codes JCS5N60VB-O-V-N-B JCS5N60RB-O-R-N-B JCS5N60CB-O-C-N-B JCS5N60FB-O-F-N-B Halogen Free NO NO NO NO Packaging Tube Tube Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS5N60VB JCS5N60RB JCS5N60CB JCS5N60FB Package IPAK DPAK TO-220C TO-220MF 201011A 1/12 R JCS5N60B ABSOLUTE RATINGS (Tc=25) JCS5N60VB/RB Parameter Symbol Value JCS5N60CB 600 5.0 2.5 5.0* 2.5* JCS5N60FB Uni t V A A Drain-Source Voltage Drain Current VDSS ID T=25 T=100 IDM -continuous 1 Drain Current - pulse note 1 Gate-Source Voltage 2 Single Pulsed Avalanche Energy note 2 1 Avalanche Current note 1 1 Repetitive Avalanche Current note 1 3 Peak Diode Recovery dv/dt note 3 16 16* A VGSS 30 V EAS 240 mJ IAR 5.0 A EAR 10.0 mJ dv/dt 5.5 V/n s 33 W W/ Power Dissipation PD TC=25 -Derate above 25 TJTSTG 51 100 0.39 0.80 0.26 Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55+150 TL 300 * *Drain current limited by maximum junction temperature 201011A 2/12 R JCS5N60B Tests conditions Min Typ Max Units Parameter Symbol ELECTRICAL CHARACTERISTICS Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VGS(th) VDS = VGS , ID=250A 2.0 4.0 V BVDSS ID=250A, VGS=0V referenced to 600 V BVDSS/ ID=250A, 25 TJ - 0.65 - V/ IDSS VDS=600V,VGS=0V, TC=25 VDS=480V, TC=125 - - 10 100 100 A A nA IGSSF VDS=0V, VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=2A - 1.7 2.4 gfs VDS = 40V , ID=2Anote 4 VDS=25V, VGS =0V, f=1.0MHZ - 4.7 - S Dynamic Characteristics Ciss Coss Crss 490 642 95 124 9 12 pF pF pF 201011A 3/12 R JCS5N60B td(on) tr td(off) tf Qg Qgs Qgd VDS =480V , ID=4A VGS =10V note 45 VDD=300V,ID=4A,RG=25 note 45 16 42 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 49 111 46 102 37 3.6 4.9 84 13.3 19 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 5 A ISM - - 20 A VGS=0V, IS=5.0A - - 1.4 V trr Qrr VGS=0V, IS=5.0A (note 4) dIF/dt=100A/s - 330 2.67 - ns C THERMAL CHARACTERISTIC /RB Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 2L=25mH, IAS=4.0A, VDD=50V, RG=25 , TJ=25 3ISD 4.0A,di/dt 200A/s,VDDBVDSS, TJ=25 4300s,2 5 Max JCS5N60CB JCS5N60FB 1.25 62.5 3.79 62.5 Unit Parameter Symbol JCS5N60VB Rth(j-c) Rth(j-A) Notes: 2.50 83 /W /W 1Pulse width limited by maximum junction temperature 2L=25mH, IAS=4.0A, VDD=50V, RG=25 ,Starting TJ=25 3 ISD 4.0A,di/dt 200A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature 201011A 4/12 R JCS5N60B ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics 10 On-Region Characteristics 10 VGS Top 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V ID [A] ID [A] 150 1 25 1 Notes 1. 250s pulse test 2. TC=25 10 Notes 1.250s pulse test 2.VDS=40V 0.1 2 4 6 8 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 2.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 R DS (on ) [ ] 2.2 IDR [A] 2.0 VGS=10V 25 1 1.8 150 1.6 1.4 VGS=20V 1.2 0 1 2 3 4 Note T j=25 5 6 Notes 1. 250s pulse test 2. VGS=0V 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 ID [A] VSD [V] Capacitance Characteristics 8.0x10 2 Gate Charge Characteristics 12 Capacitance [pF] 6.0x10 2 VGS Gate Source Voltage[V] Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd VDS=480V 10 VDS=300V VDS=120V 8 4.0x10 2 6 4 2.0x10 2 2 0.0 10 -1 0 V DS Drain-Source Voltage [V] 10 0 10 1 0 2 4 6 8 10 12 14 Qg Toltal Gate Charge [nC] 201011A 5/12 R JCS5N60B On-Resistance Variation vs. Temperature 3.0 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature 1.15 1.10 2.5 BVDSS (Normalized) RDS(on ) (Normalized) 1.05 2.0 1.5 1.00 1.0 0.95 0.90 -75 -50 -25 0 25 50 Notes 1. VGS=0V 2. ID=250A 75 100 125 150 0.5 Notes 1. VGS=10V 2. ID=2.0A -50 -25 0 25 50 75 100 125 150 0.0 -75 T j [ ] Tj [ ] Maximum Safe Operating Area For JCS5N60(V/R/C)B Maximum Safe Operating Area For JCS5N60FB Maximum Drain Current vs. Case Temperature 6 4 I D [A] 2 0 25 50 75 100 125 150 T C [] 201011A 6/12 R JCS5N60B Transient Thermal Response Curve For JCS5N60(V/R)B ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve For JCS5N60CB Transient Thermal Response Curve For JCS5N60FB 201011A 7/12 R JCS5N60B Unitmm PACKAGE MECHANICAL DATA IPAK 201011A 8/12 R JCS5N60B Unitmm PACKAGE MECHANICAL DATA DPAK 201011A 9/12 R JCS5N60B Unitmm PACKAGE MECHANICAL DATA TO-220C 201011A 10/12 R JCS5N60B Unitmm PACKAGE MECHANICAL DATA TO-220MF 201011A 11/12 R JCS5N60B NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1. 2. 3. 4. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 201011A 12/12 |
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